Swati obtained her bachelor’s degree in electrical and electronics engineering from BITS Pilani, Goa, in August 2018. She joined Dr. Mayank Shrivastava’s Devices Lab at IISc as a Research Assistant in June 2018. She is positioned at the characterization end of the technology development team for building reliable, high-power Gallium Nitride based devices. Her analysis of their terminal characteristics serves as a feedback to the device and material processing team. She conducts device failure analysis tests to study the high-field breakdown characteristics and studies device transients by applying nanosecond time-scale pulses for device stressing. During her bachelor’s degree, she worked at Texas Instruments, Bengaluru, on pre-silicon validation and testing. Swati enjoys reading in her free time, and is also a guitarist.