Rajat pursued his B.E in Electrical and Electronics Engineering from Birla Institute of Technology, Mesra in 2015 and has since then moved to Bangalore to pursue his doctoral studies at IISc Bangalore under the supervision of Prof. Mayank Shrivastava and Prof. Sanjiv Sambandan.  His work focusses on understanding the Electrostatic Discharge behavior of flexible electronic devices with a focus on existing a-Si: H technology and futuristic technologies including Organic electronics and Metal oxides based semiconductor technology. His work is aimed at understanding the physics of device failure and degradation, electro-thermal charge transport and material specific high field high-frequency effects with an aim of aiding technology development in these areas.

In his spare time, he likes to read and explore different places.


  1. R. Sinha, P. Bhattacharya, S. Sambandan and M. Shrivastava, “On the ESD behavior of a-Si:H based thin film transistors: Physical insights, design and technological implications,” 2018 IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, 2018, pp. 3E.2-1-3E.2-6
  2. R. Sinha, N. K. Kranthi, S. Sambandan and M. Shrivastava, “On the ESD behavior of pentacene channel organic thin film transistors,” 2017 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), Tucson, AZ, 2017, pp. 1-6.