S. No.

Project Title

Agency

Value in Rs. (Lacs)

Duration

PI/Co-PI/Investigator

1

Institute Seed Grant for the Establishment of Advance Nanoelectronic Device & Circuit Research Laboratory

IISc

34

Oct 2013 – Sep 2014

PI

2

Demonstration of Graphene based RF Transistors

DRDO (SSPL)

10

June 2014 – Oct. 2014

PI

3

Exploration of Carrier Transport and Contact Resistance Behaviors in Carbon Nanotube and Graphene Devices Using Nanosecond Time Scale Charge Bust

DST (SERB)

51.7

July 2014 – June 2017

PI

4

Investigation on GaN devices for power electronic switching applications and design and development of a high frequency GaN convertors topology

NaMPET Phase-II

191.2

Oct. 2014 – March 2017

Investigator

5

Advance Nanoscale Characterization Facility

IISc

110.1

Jan 2015 – Sep 2015

PI

6

ESD Reliability of sub-14nm node technologies

Intel, Germany

100

Dec 2015 – Nov. 2018

PI

7

12th Plan Grant to Develop Laboratory Space

IISc

5

Sep 2016 – March 2017

PI

8

Technology Development for 600V Normally – OFF Gallium Nitride Transistor for Reliable Power Electronic Systems

DST (TSDP)

1028

May 2016 – April 2019

PI

9

Graphene Based THz Transistor Technology

DRDO (ERIPR)

470

March 2017 – Nov. 2020

PI

10

High Voltage & ESD Device Development & Enablement in SCL’s 180nm CMOS Technology

IMPRINT

300

Jan 2017 – June 2019

PI

11

Detailed Project Report on a Commercial GaN Foundary

DeitY

60

March 2016 – Sep. 2016

Investigator

12

Power-scalability of Advance Semiconductor Devices from ESD time domain to DC

Texas Intruments (USA)

140

Jan 2018 – Dec 2020

PI

13

2D Material Based Flexible Electronics Technology: Towards High Performance Ultra Light Weight & Flexible Electronics

MeitY
(Under CEN-III, which is a 75 Cr. project)

Shared among 15-20 faculties

April 1st 2018 to March 31st 2022

Lead Investigator

Total Sanctioned Funding March 2018

2800