Bhawani Shankar

bhawani@iisc.ac.in

Bhawani Shankar is a young scientist who did Masters in Electrical Engineering with specialization in Power Electronics, from Birla Institute of Technology and Science (BITS), Pilani, India in 2013. In 2014, he joined Electronic Systems Division at Central Electronics Engineering Research Institute (CSIR-CEERI), where he was engaged in design and development of 4H-SiC Schottky barrier diode. He is currently pursuing Ph.D in GaN power device reliability at Indian Institute of Science, Bangalore, India. His research interest is reliability of power semiconductor devices under extreme conditions like high voltage, high current injection and electrostatic discharges (ESD). His present research focus is safe operating area reliability of AlGaN/GaN high electron mobility transistors (HEMTs) where his key contribution is the discovery of unique failure modes at the SOA boundary in AlGaN/GaN HEMTs. He is a creative mind with passion towards painting, poetry and astronomy.

Awards and Achievements

2007:  Bright Student Merit Award by HCL, India; for meritorious performance in Bachelor of Engineering
2016: International Travel Fellowship by SERB, Department of Science and Technology, India
2018: International Travel Grant by Council of Scientific and Industrial Research, Govt. of India

List of Publications

*Published

  • Bhawani Shankar, A. Soni, S. D. Gupta, S. Shikha, S. Singh, S. Raghavan and M. Shrivastava, ‘Time
    Dependent Early Breakdown of AlGaN/GaN Epi Stacks and Shift in SOA Boundary of HEMTs Under Fast Cyclic Transient Stress’, in 64th IEEE International Electron Devices Meeting (IEDM), 2018
  • Bhawani Shankar, A. Soni, S. D. Gupta, R. Sengupta, H. Khand, N. Mohan, S. Raghavan and M. Shrivastava, ‘On the Trap Assisted Stress Induced Safe Operating Area Limits of AlGaN/GaN HEMTs’, in 2018 IEEE International Reliability Physics Symposium (IRPS), 2018, 4E.4–1–4E.4–5. doi: 10.1109/IRPS.2018.8353596.
  • Bhawani Shankar, A. Soni, S. D. Gupta and M. Shrivastava, ‘Safe Operating Area (SOA) Reliability of Polarization Super Junction (PSJ) GaN FETs’, in 2018 IEEE International Reliability Physics Symposium (IRPS), 2018, 4E.3–1–4E.3–4. doi: 10.1109/IRPS.2018.8353595.
  • Bhawani Shankar, A. Soni, M. Singh, R. Soman, H. Chandrasekar, N. Mohan, N. Mohta, N. Ramesh, S.
    Prabhu, A. Kulkarni, D. Nath, R. Muralidharan, K. N. Bhat, S. Raghavan, N. Bhat and M. Shrivastava,
    ‘Trap Assisted Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs’, in 2017 IEEE International Reliability Physics Symposium (IRPS), 2017, WB–5.1–WB–5.5. doi: 10.1109/IRPS.2017. 7936414.
  • Bhawani Shankar and M. Shrivastava, ‘Unique ESD Behavior and Failure Modes of AlGaN/GaN HEMTs’, in 2016 IEEE International Reliability Physics Symposium (IRPS), 2016, EL–7–1–EL–7–5. doi: 10.1109/IRPS. 2016.7574608.
  • Bhawani Shankar, R. Singh, R. Sengupta, H. Khand, A. Soni, S. D. Gupta, S. Raghavan, H. Gossner and M. Shrivastava, ‘Trap Assisted Stress Induced ESD Reliability of GaN Schottky Diodes’, in 2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2018, pp. 1–6. doi: 10.23919/EOS/ESD.2018. 8509745.
  • Bhawani Shankar, R. Sengupta, S. D. Gupta, A. Soni, N. Mohan, N. Bhat, S. Raghavan and M. Shrivastava, ‘On the ESD Behavior of AlGaN/GaN Schottky Diodes and Trap Assisted Failure Mechanism’, in 2017 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2017, pp. 1–6. doi: 10.23919/EOSESD. 2017.8073423.
  • Bhawani Shankar, A. Soni, M. Singh, R. Soman, K. N. Bhat, S. Raghavan, N. Bhat and M. Shrivastava,
    ‘ESD Behavior of AlGaN/GaN HEMT on Si: Physical Insights, Design Aspects, Cumulative Degradation and Failure Analysis’, in 2017 30th International Conference on VLSI Design (VLSID), 2017, pp. 361–365. doi: 10.1109/VLSID.2017.57.
  • Bhawani Shankar, A. Soni, S. D Gupta, R. Sengupta, H. Khand, N. Mohan, S. Raghavan, N. Bhat and M. Shrivastava, ‘Design and Reliability of GaN Power HEMT Technology (Invited)’, ECS Meeting Abstracts, vol. MA2018-02, no. 16, p. 713, 2018. [Online]. Available: http://ma.ecsdl.org/content/MA2018-02/16/713.abstract.
  • Bhawani Shankar, A. Soni, S. D. Gupta, and M. Shrivastava, ‘What All We Understand About SOA Reliability of GaN HEMT’, in GaN Marathon 2.0, April 18-19, Padova, Italy, 2018.
  • V. Joshi, Bhawani Shankar, S. P. Tiwari and M. Shrivastava, ‘Dependence of Avalanche Breakdown
    on Surface and Buffer Traps in AlGaN/GaN HEMTs’, in 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2017, pp. 109–112. doi: 10.23919/SISPAD.2017.8085276.
  • Bhawani Shankar, S. K. Gupta, W. R. Taube and J. Akhtar, ‘Dependence of Field Plate Parameters on
    Dielectric Constant in a 4H-SiC Schottky Diode’, in 2014 IEEE 2nd International Conference on Emerging Electronics (ICEE), 2014, pp. 1–3.
  • Bhawani Shankar, S. K. Gupta, W. R. Taube and J. Akhtar, ‘High-k Dielectrics Dased Field Plate Edge
    Termination Engineering in 4H-SiC Schottky Diode’, International Journal of Electronics, vol. 103, no. 12, pp. 2064–2074, 2016. doi: 10.1080/00207217.2016.1178340.
  • S.K. Gupta, Bhawani Shankar, W. R. Taube, J. Singh and J. Akhtar, ‘Capacitance–Conductance Spectroscopic Investigation of Interfacial Oxide Layer in Ni/4H–SiC (0001) Schottky Diode’, Physica B: Condensed Matter, vol. 434, pp. 44 –50, 2014, issn: 0921-4526. doi: https://doi.org/10.1016/j.physb.2013.10.042.

*To Appear (Accepted)/ Under Review

  • Bhawani Shankar and M. Shrivastava, ‘ESD Reliability of AlGaN/GaN HEMT Technology’, IEEE Transactions on Electron Devices
  • Bhawani Shankar and M. Shrivastava, ‘Distinct Failure modes of AlGaN/GaN HEMTs under ESD Conditions’, IEEE Transactions on Device and Materials Reliability
  • Bhawani Shankar, S. D. Gupta, A. Soni, S. Raghavan and M. Shrivastava, ‘ESD Behavior of AlGaN/GaN Schottky Diodes (Invited)’, IEEE Transactions on Device and Materials Reliability,
  • Bhawani Shankar, A. Soni, S. D. Gupta, S. Raghavan, H. Gossner and M. Shrivastava, ‘Trap Assisted Stress Induced ESD Reliability of AlGaN/GaN Schottky Diodes’, IEEE Transactions on Electron Devices
  • Bhawani Shankar, A. Soni, H. Chandrasekar, S. Raghavan and M. Shrivastava, ‘First Observations on the Trap Induced Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs’, IEEE Transactions on Electron Devices
  • Bhawani Shankar, A. Soni, S. D. Gupta, S. Raghavan and M. Shrivastava, ‘Trap Assisted Stress Induced Safe Operating Area Limits of AlGaN/GaN HEMTs’, IEEE Transactions on Electron Devices,
  • Bhawani Shankar and M. Shrivastava, ‘Safe Operating Area (SOA) Concerns in Polarization Super Junction (PSJ) GaN FETs’, IEEE Transactions on Electron Devices
  • Bhawani Shankar, A. Soni, S. D. Gupta, S. Shikha, S. Singh, S. Raghavan and M. Shrivastava, ‘Time
    Dependent Early Breakdown of AlGaN/GaN Epi Stacks and Shift in SOA Boundary of HEMTs under Fast Cyclic Transient Stress’, IEEE Transactions on Electron Devices
  • S. D. Gupta, …., Bhawani Shankar, S. Raghavan, N. Bhat and M. Shrivastava, ‘Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-mode Operation by AlxTi1-xO based Gate Stack Engineering’, IEEE Transactions on Electron Devices
  • A. Soni, S. Shikha, Bhawani Shankar and M. Shrivastava, ‘Surface treatment methodologies for high performance HEMT’, IEEE Electron Device Letters