Dr. Asha Yadav

 

Dr. Asha Yadav has received PhD in Si based superlattice structures for various device applications from Center for Energy, IIT Guwahati in 2018, her PhD thesis title was “Growth and study of optoelectronic properties of a-Si:H/nc-Si:H based superlattice structures”. She has completed her B.Sc in Electronic Sc. from St Edmund’s College, NEHU, Shillong, Meghalaya and M.Sc in Electronic Sc. from Jadavpur University, Kolkata.

She has joined MSD lab, DESE, IISc Bangalore in Sep, 2018 as a PDF. Her current area of research is on structural and optoelectronic properties of 2D materials like MoSe2, MoS2, WSe2, WS2 and phosphorene for various device applications.

She like singing, listening to music, gardening and to play badminton in her leisure time.

List of publications

  1. Mukesh Singh, Asha Yadav, Shailendra Kumar, Pratima Agarwal, “Annealing induced electricalconduction and band gap variation in thermally reduced graphene oxide films with differentsp2/sp3 fraction”, Applied Surface Science, 326,236 (2015).
  2. Himanshu S. Jha, AshaYadav, Mukesh Singh, Shilendra Kumar and PratimaAgarwal, “Growthof wide band gap nanocrystalline Silicon Carbide films by HWCVD: influence of filamenttemperature on structural and opto-electronic properties”, Journal of Electronic Materials, DOI:10.1007/s11664-014-3580-9 (2014).
  3. Asha Yadav and Pratima Agarwal, “Persistent photoconductivity studies in a-Si:H/nc-Si:H thinfilm superlattices”, Superlattices and Microstructures, 85(2015) 776.
  4. Asha Yadav and Pratima Agarwal, “Density of states measurements in a-Si:H and a-Si:H/nc-Si:Hmultilayer structures prepared by HWCVD technique”, Material Science and SemiconductorProcessing, 61(2017) 5-10.
  5. Asha Yadav and Pratima Agarwal, “Laser Induced Selective Crystallization of AmorphousSilicon Thin Film for Device Applications”, Materials today proc., 4 (2017) 12722-12725.
  6. Asha Yadav, Juhi Kumari and Pratima Agarwal, “Role of interface states on electron transport ina-Si:H/nc-Si:H multilayer structures”, AIP Conf. Proc. 1953 (2018) 100045.
  7. Asha Yadav, Pilik Basumatary and Pratima Agarwal, “Growth of a-Si:H and nc-Si:H thin filmsat high deposition rate by HWCVD technique”. (Accepted in Springer Proc.).
  8. Asha Yadav, Pratima Agarwal and Rana Biswas, “Quantum size effects and tunable visiblephotoluminescence in a-Si:H/nc-Si:H superlattices”. (under review)

National and International Conferences (Attended)

  1. Himanshu S. Jha, Asha Yadav, Mukesh Singh, Ramakrishna Madaka and Pratima Agarwal,“Highly transparent nanocrystalline Silicon Carbide thin films prepared by hot wire chemical vapor deposition technique”, International Conference on Solar Energy Photovoltaic, KIITBhubaneswar, 19-21st December, 2012.
  2. Himanshu S. Jha, Asha Yadav, Mukesh Singh, Ramakrishna Madaka and Pratima Agarwal“Hydrogenated Nanocrystalline Silicon Films Prepared at High Deposition Rate”,IWPSD 2013,AMITY University, Noida, 10-13th Dec’ 2013 .
  3. Asha Yadav, Himanshu S. Jha, Mukesh Singh, Ramakrishna Madaka, Buddha Deka Boruah andPratima Agarwal “Study on photoconductivity of hydrogenated amorphous Silicon (a-Si:H)films on flexible substrate”, ICNT 2013, Haldia Regional Center, Indian Institute of Chemical Engineering, 25-26st Oct’ 2013.
  4. Asha Yadav, Ramakrishna Madaka, Himanshu S. Jha and Pratima Agarwal, “HydrogenatedAmorphous Silicon Films on Flexible Substrates”, ICANN 2013, IIT Guwahati, 1-3rdDec’2013.
  5. Asha Yadav, Ramakrishna Madaka, Himanshu S. Jha and Pratima Agarwal “Comparativestudy of photosensitivity of hydrogenated a-Si:H thin films on flexible and glass substrates”, ICONSAT 2014, Panjab University Sector-14, Chandigarh, 3-5th March 2014.
  6. Asha Yadav, Mukesh Singh and Pratima Agarwal,“a-Si:H/nc-Si:H thin film super lattice byHot Wire Chemical Vapor Deposition ”, ICRANN 2014, Jawaharlal Nehru University, NewDelhi, 15-16th Dec 2014. .
  7. Asha Yadav, Mukesh Singh and Pratima Agarwal, “Influence of hydrogen dilution on
    structural, electrical and optical properties of silicon thin films by HWCVD technique”,
    TransLES 2014, IASST Guwahati, 11-13th Dec 2014.
  8. Asha Yadav and Pratima Agarwal, “Optoelectronic properties of silicon thin films for solar cellapplication: Influence of hydrogen dilution”, FERIAP 2015, Centre for Energy, IIT Guwahati, 21-22nd March 2015.
  9. Asha Yadav and Pratima Agarwal, “Persistent photoconductivity studies in a-Si:H/nc-Si:Hthin films super lattice”, ICANS26 2015, Aachen, Germany, 13-18th Sep 2015.
  10. Asha Yadav, Venkanna Kanneboina and Pratima Agarwal, “Comparative studies of
    microstructure of silicon thin films by Raman spectroscopy and electrical transport
    measurements”, IWPSD 2015, IISc Bangalore, 7-10th Dec 2015.
  11. Asha Yadav, P. Basumatary and P. Agarwal, “Research Activities in solar energy lab”,
    Research Conclave’16, IIT Guwahati, 18-20th March 2016.
  12. Asha Yadav and Pratima Agarwal, “Visible Photoluminescence in nc-Si:H/a-Si:H superlatticestructures prepared by rf-PECVD technique”, NCRANNT 2016, NEHU Shillong, 8-9th Sep
  13. Asha Yadav and Pratima Agarwal, “Laser Induced Selective Crystallization of AmorphousSilicon Thin Film for Device Applications”, ICSEP 2016, KIIT Bhubaneswar, 17-19th Dec 2016.
  14. Asha Yadav, Pilik Basumatary and Pratima Agarwal, “Growth of a-Si:H and nc-Si:H thinfilms at high deposition rate by HWCVD technique”, ICEOT 2017, The Neotia University, Kolkata, 17-19th April’2017.
  15. Asha Yadav and Pratima Agarwal, “Influence of Laser intensity on microstructure of Si thinfilms in Laser Raman scattering studies”, ICSIMR 2017, CIF, IIT Guwahati, Guwahati, 30th June-1st July’2017.
  16. Asha Yadav and Pratima Agarwal, “Persistent photoconductivity and space charge limitedconduction in a-Si:H/nc-Si:H: Role of interface states”, ICTF 2017, NPL, New Delhi,14-17th Nov, 2017.
  17. Asha Yadav, Juhi Kumari and Pratima Agarwal, “Role of interface states on electron transportin a-Si:H/nc-Si:H multilayer structures”, ICC 2017, Govt. Engineering Collage, Bikaner, Rajasthan, 24-25th Nov, 2017.
  18. Asha Yadav, Pratima Agarwal and Rana Biswas, “Tunable visible photoluminescence in aSi:H/nc-Si:H superlattice structures”, National Workshop on FLUORESCENCE and RAMAN spectroscopy’2017 (FCS 2017), Dept. of Biotechnology, IIT Guwahati, 17-21st Dec, 2017.
  19. Asha Yadav, Pratima Agarwal and Rana Biswas, “Quantum size effects and tunable visiblephotoluminescence in a-Si:H/nc-Si:H superlattices”, Research Conclave’2018, IITGuwahati,8- 11th March, 2018.

Awards

  1. Selected for the best poster presentation award inResearch Conclave’16”, IIT Guwahati, 18-20th March 2016, for the paper entitled as “Research Activities in solar energy lab”, Asha Yadav, P. Basumatary and P. Agarwal.
  2. Selected for the best poster presentation award in “ICEOT 2017”, The Neotia University, Kolkata, 17-19th April’2017, for the paper entitled as “Growth of a-Si:H and nc-Si:H thin films at high deposition rate by HWCVD technique ”, Asha Yadav, Pilik Basumatary and Pratima Agarwal.
  3. Selected for the best oral presentation award in “ICTF 2017”, NPL, New Delhi,14-17th Nov, 2017, for the paper entitled as “Persistent photoconductivity and space charge limited conduction in a-Si:H/nc-Si:H: Role of interface states”, Asha Yadav and Pratima Agarwal.
  4. Selected for the best poster presentation award in “Research Conclave’2018”, IIT Guwahati, 8- 11th March, 2018, for the paper entitled as “Quantum size effects and tunable visible photoluminescence in a-Si:H/nc-Si:H superlattices”, Asha Yadav, Pratima Agarwal and Rana Biswas.