Ankit Soni

Ankit was born and raised in Udaipur, the ‘City of Lakes’ in India. He obtained his B.Tech degree in Electronics and Communication Engineering from National Institute of Technology, Hamirpur. His quest for pursuing research landed him in Prof. Shrivastava’s group, where he worked on optimization of ohmic contact resistance and developing consistent simulation strategy for GaN high electron mobility transistor (HEMT) for a year as research assistant. Following this, he joined the group as a PhD student. His research interests include III-V semiconductor technology, study and CAD analysis of power and RF HEMT. He is currently involved in design and fabrication of AlGaN/GaN HEMTs for power and high frequency switching applications. In his spare time, he enjoys music, reading and cricket. He also loves to travel with friends in his time off.


  1. Srinivasan Raghavan, Navakanta Bhat, Mayank Shrivastava, Rohith Soman, Ankit  Soni, “Buried Channel normally-off AlGaN/GaN High ElectronMobility Transistorwith RESURF Junction”.
  2. Mayank Shrivastava, Sayak Dutta Gupta, Ankit Soni, “e-Mode Field Effect High Electron Mobility (HEMT) Transistor”. (submitted)